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| SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG03EAESM TVS Diode for ESD Protection in Portable Electronics FEATURES Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) A G H 2 1 E B D DIM A B C D E G H J Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. Low clamping voltage. Low leakage current. MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 3 C J 1. (TVS) D1 CATHODE APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA s) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. 2. (TVS) D2 CATHODE 3. COMMON ANODE ESM Marking Type Name E1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Peak Pulse Current (tp=8/20 s) Junction Temperature Storage Temperature ) SYMBOL PPK IPP Tj Tstg RATING 60 5 150 -55 150 UNIT W A D2 2 D1 1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage ) TEST CONDITION It=5mA VRWM=3V IPP=1A, tp=8/20 s IPP=5A, tp=8/20 s VR=0V, f=1MHz MIN. 5.32 TYP. 35 MAX. 3 5.88 5.0 10 15 45 UNIT V V A V V pF SYMBOL VRWM VBR IR VC(1) VC(2) Junction Capacitance CJ 2007. 5. 25 Revision No : 2 1/2 PG03EAESM NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME PEAK PULSE POWER PP P (W) 1K 110 POWER DERATION CURVE RATED POWER OR IPP (%) 100 100 90 80 70 60 50 40 30 20 10 0 0 25 50 Peak Pulse Power 8/20us Average Power 10 1 10 100 75 100 125 150 PULSE DURATION tP (s) AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM PEAK PULSE CURRENT IPP (%) 110 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 Waveform Parameters : tr=8s td=20s e -t CJ - VR 40 (pF) CAPACITANCE CJ 35 30 25 20 15 10 5 0 0 1 2 3 4 5 td=lpp/2 TIME (s) REVERSE VOLTAGE VR (V) 2007. 5. 25 Revision No : 2 2/2 |
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